IRLR130A Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Advanced Power MOSFET

$GYDQFHG 3RZHU 026)(7
IRLR/U130A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ V_DS = 100V
♦ Lower R_DS(ON): 0.101Ω (Typ.)
BV_DSS = 100 V
R_DS(on) = 0.12Ω
I_D = 13 A
D-PAK I-PAK
2
1
1
3
2
3
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25°C)
Continuous Drain Current (T_C=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T_A=25°C) ^*
Total Power Dissipation (T_C=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
13
8
45
±20
225
13
4.6
6.5
2.5
46
0.37
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
R_θJC
R_θJA
R_θJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.7
50
110
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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