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IRLM210A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
n Lower RDS(ON) : 1.185 ⦠(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TA=25oC)
Continuous Drain Current (TA=70oC)
Drain Current-Pulsed
â
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
â¡
Avalanche Current
â
Repetitive Avalanche Energy
â
Peak Diode Recovery dv/dt
â¢
Total Power Dissipation (TA=25oC) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8ï¼ from case for 5-seconds
IRLM210A
BVDSS = 200 V
RDS(on) = 1.5 â¦
ID = 0.77 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Value
200
0.77
0.62
6.1
±20
27
0.77
0.18
5.0
1.8
0.014
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJA
Characteristic
Junction-to-Ambient *
Typ.
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
69.4
Units
oC/W
Rev. A
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