IRLM120A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ V_DS = 100V
n Lower R_DS(ON) : 0.176 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25^oC)
Continuous Drain Current (T_C=70^oC)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T_C=25^oC) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
IRLM120A
BV_DSS = 100 V
R_DS(on) = 0.22 Ω
I_D = 2.3 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Value
100
2.3
1.85
18
±20
105
2.3
0.27
6.5
2.7
0.022
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
Thermal Resistance
Symbol
Characteristic
Typ.
R_θJA
Junction-to-Ambient *
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
46.3
Units
o_C/W
1