IRFWI540A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
IRFW/I540A
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175℃ Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ V_DS = 100V
n Lower R_DS(ON) : 0.041 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25℃)
Continuous Drain Current (T_C=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power Dissipation (T_A=25℃) ^*
Total Power Dissipation (T_C=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
BV_DSS = 100 V
R_DS(on) = 0.052 Ω
I_D = 28 A
D²-PAK I²-PAK
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Value
100
28
19.8
110
±20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
Thermal Resistance
Symbol
Characteristic
Typ.
R_θJC
R_θJA
R_θJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.4
40
62.5
Units
℃/W
Rev. B1
2001 Fairchild Semiconductor Corporation
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