IRFU410A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
Improved Inductive Ruggedness
Rugged Polysilicon Gate Cell Structure
Fast Switching Times
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Improved High Temperature Reliability
IRFU410A
IRFU410A
BV_DSS = 520 V
R_DS(on) = 10.0 ^Ω
I_D = 1.2 A
TO-220
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25 ^ΟC)
Continuous Drain Current (T_C=100 ^ΟC )
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_C=25 ^ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
R_θJC
R_{θ CS}
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
1.Gate 2. Drain 3. Source
Value
520
1.2
0.8
4.0
+_{_ 20}
40
1.2
4.2
3.5
42
0.33
-55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ^ΟC
Ο_C
Typ.
--
1.7
--
Max.
3.0
--
110
Units
Ο_{C /W}
Rev. B
©1999 Fairchild Semiconductor Corporation