IRFS644A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
FEATURES
s Avalanche Rugged Technology
s Rugged Gate Oxide Technology
s Lower Input Capacitance
s Improved Gate Charge
s Extended Safe Operating Area
s Lower Leakage Current : 10 μA (Max.) @ V_DS = 250V
s Lower R_DS(ON) : 0.214 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25℃)
Continuous Drain Current (T_C=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power Dissipation (T_C=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
IRFS644A
BV_DSS = 250 V
R_DS(on) = 0.28 Ω
I_D = 7.9 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
250
7.9
5
56
±30
390
7.9
4.3
4.8
43
0.35
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
Thermal Resistance
Symbol
R_θJC
R_θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.89
62.5
Units
℃/W