IRFS610A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advenced Power MOSFET (N-CHANNEL)

Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ V_DS = 200V
Low R_DS(ON) : 1.169 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25 ^oC)
Continuous Drain Current (T_C=100 ^oC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_C=25 ^oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
IRFS610A
BV_DSS = 200 V
R_DS(on) = 1.5 Ω
I_D = 2.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
200
2.5
1.6
10
+_{_ 30}
42
2.5
2.2
5.0
22
0.18
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
Thermal Resistance
Symbol
R_θJC
R_θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
5.71
62.5
Units
o_C/W
Rev. B