IRFP150N Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

Data Sheet
January 2002
IRFP150N
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.030Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER^©
Electrical Models
- Spice and SABER^© Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Symbol
D
Ordering Information
PART NUMBER
IRFP150N
PACKAGE
TO-247
BRAND
IRFP150N
G
S
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
IRFP150N
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous (T_C= 25^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Continuous (T_C= 100^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
V
100
V
±20
V
44
A
31
A
Figure 4
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
155
W
1.03
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
o_C
260
o_C
NOTES:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
IRFP150N Rev. B