IRFM220A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ V_DS = 200V
Low R_DS(ON) : 0.626 Ω(Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_A=25^o_C )
Continuous Drain Current (T_A=70 ^o_C)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_A=25^oC )*
Linear Derating Factor ^*
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
IRFM220A
BV_DSS = 200 V
R_DS(on) = 0.8 Ω
I_D = 1.13 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Value
200
1.13
0.9
9
+_{_ 30}
77
1.13
0.24
5.0
2.4
0.019
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
Thermal Resistance
Symbol
R_θJA
Characteristic
Junction-to-Ambient *
Typ.
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
52
Units
o_C/W
Rev. B
©1999 Fairchild Semiconductor Corporation