IRFM120ATF Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Avalanche Rugged Technology

Advanced Power MOSFET
IRFM120A
FEATURES ^{IEEE802.3af Compatible}
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 #A (Max.) @ V_DS = 100V
! Lower R_DS(ON) : 0.155 ! (Typ.)
BV_DSS = 100 V
R_DS(on) = 0.2 !
I_D = 2.3 A
SOT-223
2
1
3
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_A=25%)
Continuous Drain Current (T_A=70%)
Drain Current-Pulsed
&
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
'
Avalanche Current
&
Repetitive Avalanche Energy
&
Peak Diode Recovery dv/dt
(
Total Power Dissipation (T_A=25%) ^*
Linear Derating Factor ^*
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
2.3
1.84
18
"20
123
2.3
0.24
6.5
2.4
0.019
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/%
%
Thermal Resistance
Symbol
R_$JA
Characteristic
Junction-to-Ambient *
Typ.
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
52
Units
%/W
Rev. C