IRFD9110 Datasheet, PDF (1/7 Pages) Intersil Corporation – 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

Data Sheet
January 2002
IRFD9110
0.7A, 100V, 1.200 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD9110
HEXDIP
IRFD9110
NOTE: When ordering, use the entire part number.
Features
• 0.7A, 100V
• r_DS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
©2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B