IRFD120 Datasheet, PDF (1/7 Pages) Intersil Corporation – 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

Data Sheet
January 2002
IRFD120
1.3A, 100V, 0.300 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17401.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD120
HEXDIP
IRFD120
NOTE: When ordering, use the entire part number.
Features
• 1.3A, 100V
• r_DS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
©2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B