IRF710A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET (400V, 3.6ohm, 2A)

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FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ V_DS = 400V
♦ Low R_DS(ON): 2.815Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25°C)
Continuous Drain Current (T_C=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T_C=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
IRF710A
BV_DSS = 400 V
R_DS(on) = 3.6Ω
I_D = 2 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
400
2
1.3
6
±30
114
2
3.6
4.0
36
0.29
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
--
0.5
--
Max.
3.44
--
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation