IRF640N Datasheet, PDF (1/11 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

January 2002
IRF640N/IRF640NS/IRF640NL
N-Channel Power MOSFETs
200V, 18A, 0.15Ω
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.102Ω (Typ), V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER^©
Electrical Models
- Spice and SABER^© Thermal Impedance Models
• Peak Current vs Pulse Width Curve
• UIS Rateing Curve
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-263
TO-262
SOURCE
DRAIN
GATE
D
DRAIN
(FLANGE)
TO-220
G
S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 10V)
Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Ratings
200
±20
18
13
Figure 4
247
150
1.0
-55 to 175
Units
V
V
A
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
R_θJC
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
1.0
R _{θ JA}
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
62
R _{θ JA}
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
40
o _C/W
o _C/W
o _C/W
Package Marking and Ordering Information
Device Marking
640N
640N
640N
Device
IRF640NS
IRF640NL
IRF640N
Package
TO-263AB
TO-262AA
TO-220AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50
50
©2002 Fairchild Semiconductor Corporation
Rev. B