IRF640 Datasheet, PDF (1/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Data Sheet
IRF640, RF1S640, RF1S640SM
January 2002
18A, 200V, 0.180 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
IRF640
TO-220AB
BRAND
IRF640
RF1S640
RF1S640SM
TO-262AA
TO-263AB
RF1S640
RF1S640
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 18A, 200V
• r_DS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B