HUFA76429D3ST Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs

Data Sheet
HUFA76429D3ST_F085
September 2010
20A, 60V, 0.027 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFETs
Packaging
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.023Ω, V_GS = 10V
- r_DS(ON) = 0.027Ω, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electriecal Models
- Spice and SABER Thermal Impedance Models
- www.fairchild.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves
• Qualified to AEC Q101
• RoHS Compliant
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76429D3ST_F085 TO-252AA
76429D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76429D3ST.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous
Continuous
Continuous
Continuous
(T_C=
(T_C=
(T_C=
(T_C=
2211550000^ooCC_ooCC,, VV,, _VVGGGGSSSS====5154V0V.V)5))V.()..F(..igF..ui..gr..ue..re2..)..2...)
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I_D
I_D
I_D
I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
HUFA76429D3ST_F085
60
60
±16
20
20
20
20
Figure 4
Figures 6, 17, 18
UNITS
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTES:
1. T_J = 25^oC to 150^oC.
110
0.74
-55 to 175
300
260
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2010 Fairchild Semiconductor Corporation
HUFA76429D3ST_F085 Rev. A