HUFA76407P3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Data Sheet
HUFA76407P3
December 2001
12A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Symbol
DRAIN
(FLANGE)
HUFA76407P3
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.092Ω, V_GS = 10V
- r_DS(ON) = 0.107Ω, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76407P3
TO-220AB
76407P
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUFA76407P3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
60
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±16
V
Drain Current
Continuous
Continuous
Continuous
Continuous
(T_C
(T_C
(T_C
(T_C
=
=
=
=
1122335555^ooCCooCC,, ,,VVVV^{GGGGSSSS====150V54VV.)5))V(.)F..(i..gF..uig..rue..r..e2..)2..} _)...
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I_D
I_D
I_D
I_D
12
13
6
6
A
A
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 17, 18
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTE:
1. T_J = 25^oC to 150^oC.
38
0.25
-55 to 175
300
260
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B