HUFA76407DK8 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Data Sheet
HUFA76407DK8
December 2001
3.5A, 60V, 0.105 Ohm, Dual N-Channel,
Logic Level UltraFET® Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
Symbol
SOURCE1 (1)
GATE1 (2)
SOURCE2 (3)
GATE2 (4)
5
DRAIN 1 (8)
DRAIN 1 (7)
DRAIN 2 (6)
DRAIN 2 (5)
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.090Ω, V_GS = 10V
- r_DS(ON) = 0.105Ω, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- SPICE and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs R_GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76407DK8
MS-012AA
76407DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76407DK8T.
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous
Continuous
Continuous
(T_A
(T_A
(T_A
=
=
=
122055^o0^oCCoC,, ^{V,VVGGGSSS===1505VVV) ))(N((FNoiotgetue2re3)} )2. ^)..
.......
(Note 2)
.......
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I_D
I_D
I_D
Continuous (T_A = 100^oC, V_GS = 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate Above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTES:
1. T_J = 25^oC to 125^oC.
2. 50^oC/W measured using FR-4 board with 0.76 in² (490.3 mm²) copper pad at 1 second.
3. 228^oC/W measured using FR-4 board with 0.006 in² (3.87 mm²) copper pad at 1000 seconds.
HUFA76407DK8
60
60
±16
3.5
3.8
1.0
1.0
Figure 4
Figures 6, 17, 18
2.5
20
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
W
mW/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76407DK8 Rev. B