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HUFA75645P3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs | |||
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Data Sheet
HUFA75645P3, HUFA75645S3S
December 2001
75A, 100V, 0.014 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA75645P3
HUFA75645S3S
Symbol
D
G
S
Features
⢠Ultra Low On-Resistance
- rDS(ON) = 0.014â¦, VGS = 10V
⢠Simulation Models
- Temperature Compensated PSPICE® and SABERâ¢
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchild.com
⢠Peak Current vs Pulse Width Curve
⢠UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75645P3
TO-220AB
75645P
HUFA75645S3S
TO-263AB
75645S
NOTE: When ordering, use the entire part number. Add the sufï¬x T
to obtain the variant in tape and reel, e.g., HUFA75645S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
HUFA75645P3, HUFA75645S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
100
V
Drain to Gate Voltage (RGS = 20kâ¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous
Continuous
(T C
(T C
=
=
12050oCoC, V, VGGSS==1100VV) )(F(Figiguurere22) )
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ID
ID
75
65
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTES:
310
2.07
-55 to 175
300
260
W
W/oC
oC
oC
oC
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in âAbsol24ute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75645P3, HUFA75645S3S Rev. B
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