HUFA75623P3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs

Data Sheet
HUFA75623P3, HUFA75623S3ST
December 2001
22A, 100V, 0.064 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA75623P3
GATE
SOURCE
HUFA75623S3ST
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.064Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75623P3
TO-220AB
75623P
HUFA75623S3ST TO-263AB
75623S
NOTE: When ordering, use the entire part number i.e., HUFA75623P3.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUFA75623P3, HUFA75623S3ST UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
100
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
100
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Drain Current
Continuous
Continuous
(T_C
(T_C
=
=
21050^oC_oC, V, _VGGSS==101V0V) _{)(F(Figiugruere2)2)}
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I_D
I_D
22
15
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTE:
1. T_J = 25^oC to 150^oC.
85
0.57
-55 to 175
300
260
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Faircild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75623P3, HUFA75623S3ST Rev. B