HUFA75329D3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs

Data Sheet
HUFA75329D3, HUFA75329D3S
June 1999 File Number 4426.4
20A, 55V, 0.026 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75329D3
TO-251AA
75329D
HUFA75329D3S
TO-252AA
75329D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA75329D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 20A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.Fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
©2001 Fairchild Semiconductor Corporation
HUFA75329D3, HUFA75329D3S Rev. A