HUFA75307T3ST Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET

Data Sheet
HUFA75307T3ST
December 2001
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET® process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75307.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75307T3ST SOT-223
5307
NOTE: HUFA75307T3ST is available only in tape and reel.
Features
• 2.6A, 55V
• Ultra Low On-Resistance, r_DS(ON) = 0.090Ω
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE^® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
GATE
DRAIN
SOURCE
SOT-223
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75307T3ST Rev. B