HUF76639S3ST Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel Logic Level UltraFET Power MOSFET 100 V, 50 A, 27 mΩ Packaging

Data Sheet
HUF76639S3S
October 2013
N-Channel Logic Level UltraFET Power MOSFET
100 V, 50 A, 27 mΩ
Packaging
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
Symbol
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.026Ω, V_GS = 10V
- r_DS(ON) = 0.027Ω, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
G
HUF76639S3ST
TO-263AB
76639S
S
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF76639S3ST
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
100
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
100
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±16
V
Drain Current
Continuous (T_C = 25^oC, V_GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
50
A
Continuous
Continuous
Continuous
(T_C
(T_C
(T_C
=
=
=
11200500^oCooCC, ^V,, VV^{GGGSSS===1054VV.5))V()F.(i.gF.uig.rue.} _{r.2e.)2. )..}
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I_D
I_D
I_D
51
35
34
A
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 17, 18
Power Dissipation . . .
Derate Above 25^oC
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P_D
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTES:
1. T_J = 25^oC to 150^oC.
180
1.2
-55 to 175
300
260
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76639S3S Rev. C0