HUF76419D3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Data Sheet
HUF76419D3, HUF76419D3S
December 2001
20A, 60V, 0.043 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
HUF76419D3
DRAIN
(FLANGE)
GATE
SOURCE
HUF76419D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.037Ω, V_GS = 10V
- r_DS(ON) = 0.043Ω, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76419D3
TO-251AA
76419D
HUF76419D3S
TO-252AA
76419D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76419D3ST
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF76419D3, HUF76419D3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
60
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±16
V
Drain Current
Continuous (T_C = 25^oC, V_GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
20
A
Continuous (T_C = 25^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
20
A
Continuous
Continuous
(T_C
(T_C
=
=
100^oC,
100^oC,
V_GS
V_GS
=
=
5V) .
4.5V)
......
(Figure
..
2)
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I_D
I_D
20
19
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 17, 18
Power Dissipation . . .
Derate Above 25^oC
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P_D
..
75
0.5
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
o_C
NOTE:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF76419D3, HUF76419D3S Rev. B