HUF76407D3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Data Sheet
HUF76407D3, HUF76407D3S
December 2001
11A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
HUF76407D3
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
HUF76407D3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.092Ω, V_GS = 10V
- r_DS(ON) = 0.107Ω, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76407D3
TO-251AA
76407D
HUF76407D3S
TO-252AA
76407D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76407D3ST.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF76407D3,
HUF76407D3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
60
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±16
V
Drain Current
Continuous (T_C = 25^oC, V_GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
11
A
Continuous
Continuous
Continuous
(T _C
(T _C
(T _C
=
=
=
21153355^oC_ooCC, V,, _VVGGGSSS===1054VV.5))V(.)F.(i.gF.uig.rue.r.2e.)2.)..
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I_D
I_D
I_D
12
6
6
A
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTE:
38
0.25
-55 to 175
300
260
W
W/^oC
o_C
o_C
o_C
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
For severe environments, see our Automotive HUFA series.
©2001 Fairchild Semiconductor Corporation
HUF76407D3, HUF76407D3S Rev. B