HUF76129D3 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Data Sheet
HUF76129D3, HUF76129D3S
January 2003
20A, 30V, 0.016 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76129.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76129D3
TO-251AA
76129D
HUF76129D3S
TO-252AA
76129D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76129D3ST.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, r_DS(ON) = 0.016Ω
• Temperature Compensating PSPICE^® Model
• Temperature Compensating SABER^© Mode
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
©2003 Fairchild Semiconductor Corporation
HUF76129D3, HUF76129D3S Rev. B1