HUF76113DK8 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Data Sheet
HUF76113DK8
January 2003
6A, 30V, 0.032 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is
® manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76113DK8
MS-012AA
76113DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76113DK8T.
Features
• Logic Level Gate Drive
• 6A, 30V
• Ultra Low On-Resistance, r_DS(ON) = 0.032Ω
• Temperature Compensating PSPICE^® Model
• Temperature Compensating SABER^™ Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
S1(1)
G1(2)
D1(8)
D1(7)
S2(3)
G2(4)
D2(6)
D2(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
©2003 Fairchild Semiconductor Corporation
HUF76113DK8 Rev. B1