HUF76107P3 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Data Sheet
HUF76107P3
January 2003
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low-voltage bus switches, and power management
in portable and battery-operated products.
Formerly developmental type TA76107.
Ordering Information
PART NUMBER
HUF76107P3
PACKAGE
TO-220AB
BRAND
76107P
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, r_DS(ON) = 0.052Ω
• Temperature Compensating PSPICE^® Model
• Temperature Compensating SABER^© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
©2003 Fairchild Semiconductor Corporation
HUF76107P3 Rev. B1