HUF76105SK8 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – 5.5A, 30V, 0.050 Ohm, N-Channel, Logic

Data Sheet
HUF76105SK8
January 2003
5.5A, 30V, 0.050 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76105.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76105SK8
MS-012AA
76105SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76105SK8T.
Features
• Logic Level Gate Drive
• 5.5A, 30V
• Ultra Low On-Resistance, r_DS(ON) = 0.050Ω
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^™
Electrical Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
NC(1)
DRAIN(8)
SOURCE(2)
DRAIN(7)
SOURCE(3)
DRAIN(6)
GATE(4)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
©2003 Fairchild Semiconductor Corporation
HUF76105SK8 Rev. B1