HUF75945G3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs

HUF75945G3, HUF75945P3, HUF75945S3ST
Data Sheet
December 2001
38A, 200V, 0.071 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
Symbol
D
G
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.071Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75945G3
HUF75945P3
HUF75945S3ST
TO-247
TO-220AB
TO-263AB
75945G
75945P
75945S
NOTE: When ordering, use the entire part number.
S
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF75945G3,HUF75945P3,
HUF75945S3ST
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
200
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
200
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
38
A
Continuous (T_C = 100^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
27
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTES:
310
2.07
-55 to 175
300
260
W
W/^oC
o_C
o_C
o_C
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B