HUF75939P3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET

Data Sheet
HUF75939P3, HUF75939S3ST
December 2001
22A, 200V, 0.125 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
HUF75939P3
HUF75939S3ST
Symbol
D
G
S
Features
• Ultra Low On-Resistance
• r_DS(ON) = 0.125Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
• www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75939P3
TO-220AB
75939P
HUF75939S3ST
TO-263AB
75939S
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF75939P3, HUF75939S3ST UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
200
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
200
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
22
A
Continuous (T_C = 100^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
16
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
180
1.2
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Tech Brief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
o_C
NOTE:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
HUF75939P3, HUF75939S3ST Rev. B