HUF75925P3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs

Data Sheet
HUF75925P3, HUF75925D3ST
December 2001
11A, 200V, 0.275 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75925P3
GATE
SOURCE
HUF75925D3ST
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.275Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75925P3
HUF75925D3ST
TO-220AB
TO-252AA
75925P
75925D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF75925P3,
HUF75925D3ST
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
200
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
200
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Drain Current
Continuous
Continuous
(T_C=
(T_C=
2150^o_{0CoC, ,VVGGSS}==101V0V) _{)(F(Figiugruere2)2).}
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I_D
I_D
11
8
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate Above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTE:
1. T_J = 25^oC to 150^oC.
100
1.5
-55 to 175
300
260
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
HUF75925P3, HUF75925D3ST Rev. B