HUF75531SK8 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET

Data Sheet
HUF75531SK8
December 2001
6A, 80V, 0.030 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
Symbol
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.030Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75531SK8
MS-012AA
75531SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75531SK8T.
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
HUF75531SK8
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
80
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
80
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Drain Current
Continuous (T_A= 25^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
6
A
Continuous (T_A= 100^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
4
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTES:
1. T_J = 25^oC to 125^oC.
2. 50^oC/W measured using FR-4 board with 0.76 in² (490.3 mm²) copper pad at 10 second.
3. 152^oC/W measured using FR-4 board with 0.054 in² (34.8 mm²) copper pad at 1000 seconds
4. 189^oC/W measured using FR-4 board with 0.0115 in² (7.42 mm²) copper pad at 1000 seconds
2.5
20
-55 to 150
300
260
W
mW/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75531SK8 Rev. B