HUF75344A3 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ

October 2007
HUF75344A3
tm
N-Channel UltraFET Power MOSFET
55V, 75A, 8mΩ
Features
• R_DS(on) = 6.5mΩ ( Typ.)@ V_GS = 10V, I_D = 75A
• RoHS compliant
Description
• This N-channel power MOSFET is produced using Fairchild
Semiconductor’s innovative UItraFET process. This advanced
process technology achieves the lowest possible
on-resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very low
reverse recovery time and stored change. It was designed for
use in applications where power efficiency is important, such
as switching regulators, switching converters, motro drives,
relay drivers, low-voltage bus switches, and power manage-
ment in portable and battery-operated products.
D
G DS
TO-3PN
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 130^oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
(Note 1)
S
Ratings
55
±20
75
300
1153
288.5
1.92
-55 to +175
300
Ratings
0.52
40
Units
V
V
A
A
mJ
W
W/^oC
o_C
o_C
Units
o_C/W
©2007 Fairchild Semiconductor Corporation
1
HUF75344A3 Rev. A1
www.fairchildsemi.com