HRF3205 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

Data Sheet
HRF3205, HRF3205S
December 2001
100A, 55V, 0.008 Ohm, N-Channel, Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
NOTE: Calculated continuous current based on maximum
allowable junction temperature. Package limited to 75A
continuous, see Figure 9.
Ordering Information
PART NUMBER
HRF3205
HRF3205S
PACKAGE
TO-220AB
TO-263AB
BRAND
HRF3205
HRF3205S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
• 100A, 55V (See Note)
• Low On-Resistance, r_DS(ON) = 0.008Ω
• Temperature Compensating PSPICE^® Model
• Thermal Impedance SPICE Model
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2001 Fairchild Semiconductor Corporation
HRF3205, HRF3205S Rev. B