HGTP7N60C3D Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGTP7N60C3D, HGT1S7N60C3D,
SEMICONDUCTOR
HGT1S7N60C3DS
January 1997
14A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
• 14A, 600V at T_C = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25^oC and 150^oC. The IGBT used is developmental type
TA49115. The diode used in anti-parallel with the IGBT is devel-
opmental type TA49057.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors
JEDEC TO-262AA
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
GATE
JEDEC TO-263AB
M
A
GATE
EMITTER
COLLECTOR
(FLANGE)
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
Terminal Diagram
HGTP7N60C3D
HGT1S7N60C3D
TO-220AB
TO-262AA
G7N60C3D
G7N60C3D
N-CHANNEL ENHANCEMENT MODE
C
HGT1S7N60C3DS TO-263AB
G7N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
G
Formerly Developmental Type TA49121.
E
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES
Collector Current Continuous
At T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = 110^oC . . . . . . . . . . . .
Average Diode Forward Current
..
at
......
110^oC
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. I_C110
I_(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
PPSoowwwitceehrr ^{iDDngiissssSiiappfaaettiiooOnnpeTDroeatrtaainltigantgATrT}_C^e_C^{a=>a2t25T5oJo}CC=
150^oC, Figure
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14
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SSOA
. . . P_D
.....
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J = 125^oC, R_GE = 50Ω.
HGTP7N60C3D, HGT1S7N60C3D
HGT1S7N60C3DS
600
14
7
8
56
±20
±30
40A at 480V
60
0.487
-40 to 150
260
1
8
UNITS
V
A
A
A
A
V
V
W
W/^oC
o_C
o_C
µs
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-22
File Number 4150.1