HGTP14N40F3VL Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 330mJ, 400V, N-Channel Ignition IGBT

January 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
330mJ, 400V, N-Channel Ignition IGBT
General Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in au-
tomotive ignition circuits. Unique features include an active
voltage clamp between the drain and the gate and ESD pro-
tection for the logic level gate. Some specifications are
unique to this automotive application and are intended to
assure device survival in this harsh environment.
Formerly Developmental Type 49023
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• Max T_J = 175^oC
• SCIS Energy = 330mJ at T_J = 25^oC
Package
JEDEC TO-263AB
D² -Pak
G
E
JEDEC TO-220AB
Symbol
EC
G
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
BV_CES
BV_CGR
E_SCIS25
I_C25
I_C90
V_GES
V_GEM
I_CO
I_CO
P_D
T_J, T_STG
T_L
T_pkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (I_C = 1 mA)
Collector to Gate Breakdown Voltage (R_GE = 10KΩ)
Drain to Source Avalanche Energy at L = 2.3mHy, T_C = 25°C
Collector Current Continuous, at T_C = 25°C, V_GE = 4.5V
Collector Current Continuous, at T_C = 90°C, V_GE = 4.5V
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
L = 2.3mHy, T_C = 25°C
L = 2.3mHy, T_C = 150°C
Power Dissipation Total T_C = 25°C
Power Dissipation Derating T_C > 25°C
Operating and Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
COLLECTOR
R₁
EMITTER
Ratings
420
420
330
38
35
±10
±12
17
12
262
1.75
-40 to 175
300
260
6
Units
V
V
mJ
A
A
V
V
A
A
W
W/°C
°C
°C
°C
KV
©2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002