HGTP12N60C3D Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Data Sheet
HGTP12N60C3D, HGT1S12N60C3DS
December 2001
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25^oC and 150^oC. The IGBT used is the
development type TA49123. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49182.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3D
TO-220AB
12N60C3D
HGT1S12N60C3DS
TO-263AB
12N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in Tape and Reel, i.e.,
HGT1S12N60C3DS9A.
Symbol
C
Features
• 24A, 600V at T_C = 25^oC
• Typical Fall Time at T_J = 150^oC . . . . . . . . . . . . . . . . 210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,682,195
4,605,948
4,684,413
4,620,211
4,694,313
4,631,564
4,717,679
4,639,754
4,743,952
4,639,762
4,783,690
4,641,162
4,794,432
4,644,637
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B