HGTG30N60B3D Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60A, 600V, UFS Series N-Channel IGBT

HGTG30N60B3D, HGT4E30N60B3DS
Data Sheet
December 2001
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D, and HGT4E30N60B3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25^oC and 150^oC. The IGBT used is the development type
TA49170. The diode used in anti-parallel with the IGBT is the
development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Ordering Information
PART NUMBER
HGTG30N60B3D
PACKAGE
TO-247
BRAND
G30N60B3D
HGT4E30N60B3DS TO-268AA
G30N60B3D
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
E
C
G
TO-268AA
C
G
E
Symbol
C
Features
• 60A, 600V, T_C = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T_J = 150^oC
• Short Circuit Rating
G
E
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG30N60B3D, HGT4E30N60B3DS Rev. B1