HGTG27N120BN Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 72A, 1200V, NPT Series N-Channel IGBT

Data Sheet
HGTG27N120BN / HGT5A27N120BN
August 2002
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are Non-
Punch Through (NPT) IGBT design. This is a new member
of the MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49280.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG27N120BN
TO-247
27N120BN
HGT5A27N120BN
TO-247-ST
27N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• 72A, 1200V, T_C = 25^oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Avalanche Rated
Packaging
COLLECTOR
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
E
C
G
JEDEC STYLE TO-247-ST
COLLECTOR
(BOTTOM SIDE
METAL)
E
C
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2002 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C1