HGTG20N60C3D Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Data Sheet
HGTG20N60C3D
December 2001
45A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC. The
IGBT used is development type TA49178. The diode used in
anti-parallel with the IGBT is the RHRP3060 (TA49063).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49179.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60C3D
TO-247
G20N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 45A, 600V, T_C = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,684,413
4,809,045
4,694,313
4,809,047
4,717,679
4,810,665
4,743,952
4,823,176
4,783,690
4,837,606
4,794,432
4,860,080
4,801,986
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG20N60C3D Rev. B