HGTG20N60A4D_09 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Data Sheet
HGTG20N60A4D
February 2009
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25^oC and 150^oC. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49341.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60A4D
TO-247
20N60A4D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 55ns at T_J = 125^oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
COLLECTOR
(FLANGE)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2009 Fairchild Semiconductor Corporation
HGTG20N60A4D Rev. C1