HGTG20N60A4D Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGTG20N60A4D, HGT4E20N60A4DS
Data Sheet
APRIL 2002
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25^oC and 150^oC. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
These IGBT’s are ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. These devices have been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49341.
Ordering Information
PART NUMBER
HGTG20N60A4D
HGT4E20N60A4DS
PACKAGE
TO-247
TO-268
BRAND
20N60A4D
20N60A4DS
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . .55ns at T_J = 125^oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
TO-268AA
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,803,533
4,684,413
4,809,045
4,694,313
4,809,047
4,717,679
4,810,665
4,743,952
4,823,176
4,783,690
4,837,606
4,794,432
4,860,080
4,801,986
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2002 Fairchild Semiconductor Corporation
HGTG20N60A4D, HGT4E20N60A4DS Rev. C