HGTG18N120BND_07 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Data Sheet
HGTG18N120BND
March 2007
54A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG18N120BND is a Non-Punch Through (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49304.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG18N120BND
TO-247
18N120BND
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 54A, 1200V, T_C = 25^oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . 140ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2007 Fairchild Semiconductor Corporation
HGTG18N120BND Rev.C