HGTG12N60C3D Datasheet, PDF (1/8 Pages) Harris Corporation – 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Data Sheet
HGTG12N60C3D
December 2001
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25^oC and 150^oC. The IGBT used is the
development type TA49123. The diode used in anti parallel
with the IGBT is the development type TA49061.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49117.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG12N60C3D TO-247
G12N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• 24A, 600V at T_C = 25^oC
• Typical Fall Time . . . . . . . . . . . . . . . . 210ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B