HGTG12N60B3 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 27A, 600V, UFS Series N-Channel IGBTs

Data Sheet
HGTG12N60B3
August 2003
27A, 600V, UFS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25^oC and 150^oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49171.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG12N60B3
TO-247
G12N60B3
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 27A, 600V, T_C = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2003 Fairchild Semiconductor Corporation
HGTG12N60B3 Rev. C1