HGTD2N120CNS Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 13A, 1200V, NPT Series N-Channel IGBT

March 2005
HGTP2N120CN, HGT1S2N120CN
13A, 1200V, NPT Series N-Channel IGBT
Features
• 13A, 1200V, T_C = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time 360ns at T_J = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
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• Related Literature
• TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Informations
Part Number
HGTP2N120CN
HGT1S2N120CN
Package
TO-220AB
TO-262
Brand
2N120CN
2N120CN
Note: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-
263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.
Description
The HGTP2N120CN and HGT1S2N120CN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs combine
the best features of MOSFETs and bipolar transistors. This
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49313
COLLECTOR
(FLANGE)
E _CG
TO-220
COLLECTOR
(FLANGE)
C
E
C
G
G
TO-262
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2005 Fairchild Semiconductor Corporation
1
HGTP2N120CN, HGT1S2N120CN Rev. C
www.fairchildsemi.com