HGT1Y40N60B3D Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Data Sheet
HGT1Y40N60B3D
December 2001
70A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGT1Y40N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC. The
IGBT used is the development type TA49052. The diode
used in anti-parallel with the IGBT is the development type
TA49063.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49365.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1Y40N60B3D
TO-264
G40N60B3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• 70A, 600V, T_C = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . 100ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-264
E
C
G
COLLECTOR
(FLANGE)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B