HGT1S7N60C3DS9A Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

September 2005
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
General Description
The HGTP7N60C3D, HGT1S7N60C3DS and
HGT1S7N60C3D are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC. The
IGBT used is developmental type TA49115. The diode
used in anti-parallel with the IGBT is developmental type
TA49057.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49121.
Features
„14A, 600V at T_C = 25^oC
„ 600V Switching SOA Capability
„ Typical Fall Time...................140ns at T_J = 150^oC
„ Short Circuit Rating
„ Low Conduction Loss
„ Hyperfast Anti-Parallel Diode
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
JEDEC TO-262
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
COLLECTOR
(FLANGE)
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2005 Fairchild Semiconductor Corporation
1
HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D
Rev. B 1
www.fairchildsemi.com