HGT1S7N60A4S9A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBT

Data Sheet
HGT1S7N60A4S9A, HGTG7N60A4
HGTP7N60A4
August 2003
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25^oC and 150^oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S7N60A4S9A
HGTG7N60A4
HGTP7N60A4
TO-263AB
TO-247
TO-220AB
7N60A4
7N60A4
7N60A4
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
Features
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at T_J = 125^oC
• Low Conduction Loss
Symbol
C
G
E
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
G
(FLANGE)
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1